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| Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) Features * Avalanche energy capability guaranteed * High-speed switching * Low ON resistance Ron * No secondary breakdown 15.00.3 11.00.2 5.00.2 (3.2) 21.00.5 3.20.1 15.00.2 Applications * PDP * Switching mode regulator 16.20.5 (3.2) (2.3) Solder Dip 2.00.2 1.10.1 2.00.1 0.60.2 Absolute Maximum Ratings TC = 25C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25C Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 250 30 30 120 925 100 3 150 -55 to +150 C C Unit V V A A mJ W 5.450.3 10.90.5 1 2 3 1: Gate 2: Drain 3: Source EIAJ: SC-92 TOP-3F-B1 Package Marking Symbol: K3192 Internal Connection D Note) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25C G Electrical Characteristics TC = 25C 3C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf VDD = 100 V, ID = 15 A, RL = 6.7 VGS = 10 V Conditions ID = 1 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 15 A VDS = 10 V, ID = 15 A VDS = 10 V, VGS = 0, f = 1 MHz 8 2 50 15 4 200 1 600 650 45 115 330 130 Min 250 Typ S Max Unit V A A V m S pF pF pF ns ns ns ns 10 1 4 68 Publication date: January 2004 SJG00029BED 1 2SK3192 Electrical Characteristics (continued) TC = 25C 3C Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSF trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) Conditions IDR = 30 A, VGS = 0 L = 230 H, VDD = 100 V IDR = 15 A, di/dt = 100 A/s VDD = 100 V, ID = 15 A VGS = 10 V 260 1.6 95 34 12 1.25 41.7 Min Typ Max -1.5 Unit V ns C nC nC nC C/W C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 103 Non repetitive pulse TC = 25C IDP ID 10 DC 1 ms 10 ms 1 100 ms t = 100 s PD Ta 120 (1) (1) TC = Ta (2) Without heat sink PD = 3 W ID VDS 30 VGS = 10 V 25 TC = 25C 100 102 Power dissipation PD (W) Drain current ID (A) Drain current ID (A) 80 20 5V 15 60 40 10 4.5 V 20 (2) 10-1 1 10 102 103 5 4V 3V 0 2 4 6 8 10 12 14 0 0 50 100 150 0 Drain-source voltage VDS (V) Ambient temperature Ta (C) Drain-source voltage VDS (V) VGS ID 50 100 RDS(on) ID 30 Yfs ID Forward transfer admittance Yfs (S) VDS = 10 V TC = 25C 25 Drain-source ON resistance RDS(on) (m) VDS = 10 V TC = 25C VGS = 10 V TC = 25C 80 Gate-source voltage VGS (V) 40 20 30 60 15 20 40 10 10 20 5 0 0 2 4 6 8 10 0 0 10 20 30 0 0 5 10 15 20 25 30 35 Drain current ID (A) Drain current ID (A) Drain current ID (A) 2 SJG00029BED Short-circuit forward transfer capacitance (Common source) Ciss , Short-circuit output capacitance (Common source) Coss , Reverse transfer capacitance (Common source) Crss (pF) 102 104 103 10 0 20 40 60 80 100 f = 1 MHz TC = 25C Ciss , Coss , Crss VDS Drain-source voltage VDS (V) SJG00029BED 2SK3192 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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